Al0.2Ga0.3In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs Triple Heterostructure-Emitter Bipolar Transistor

被引：0

作者：

Tsai, Jung-Hui ^{[1
]}

机构：

[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan

来源：

SCIENCE OF ADVANCED MATERIALS | 2016年 / 8卷 / 02期

关键词：

Heterostructure-Emitter; Bipolar Transistor; AlGaInP/InGaP/GaAs; Offset Voltage; Current Gain; INGAP/GAAS HBTS; OFFSET VOLTAGE; ALGAAS/GAAS;

D O I：

10.1166/sam.2016.2532

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A heterostructure-emitter bipolar transistor with Al0.2Ga03In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs triple heterostructure emitter is demonstrated by experimental results. The employment of a thin n-GaAs emitter layer at base emitter junction effectively decreases the potential spike at base-emitter and the collector-emitter offset voltage for low power consumption in circuit applications. While, the Al0.2Ga03In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs triple heterostructure emitter is used to promote the hole confinement effect and current gain. Experimentally, the studied device exhibits a maximum current gain of 416 and a relatively low offset voltage of about 50 mV. Furthermore, a large current gain than 158 is achieved when the collector current is above 1.0 mA.

引用

页码：421 / 424

页数：4

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