Quantum-Well-Induced Giant Spin-Orbit Splitting

被引:95
|
作者
Mathias, S. [1 ,2 ,3 ,4 ]
Ruffing, A. [1 ,2 ]
Deicke, F. [1 ,2 ]
Wiesenmayer, M. [5 ]
Sarkar, I. [1 ,2 ]
Bihlmayer, G. [6 ,7 ]
Chulkov, E. V. [8 ]
Koroteev, Yu. M. [9 ]
Echenique, P. M. [8 ]
Bauer, M. [5 ]
Aeschlimann, M. [1 ,2 ]
机构
[1] Univ Kaiserslautern, Dept Phys, D-67663 Kaiserslautern, Germany
[2] Univ Kaiserslautern, Res Ctr OPTIMAS, D-67663 Kaiserslautern, Germany
[3] Univ Colorado, JILA, Boulder, CO 80309 USA
[4] Natl Inst Stand & Technol, Boulder, CO 80309 USA
[5] Univ Kiel, Inst Expt & Angew Phys, D-24098 Kiel, Germany
[6] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[7] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany
[8] CSIC UPV EHU, DIPC & CFM, Ctr Mixto, Dept Fis Mat, San Sebastian 20080, Spain
[9] RAS, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
关键词
SURFACE;
D O I
10.1103/PhysRevLett.104.066802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the observation of a giant spin-orbit splitting of quantum-well states in the unoccupied electronic structure of a Bi monolayer on Cu(111). Up to now, Rashba-type splittings of this size have been reported exclusively for surface states in a partial band gap. With these quantum-well states we have experimentally identified a second class of states that show a huge spin-orbit splitting. First-principles electronic structure calculations show that the origin of the spin-orbit splitting is due to the perpendicular potential at the surface and interface of the ultrathin Bi film. This finding allows for the direct possibility to tailor spin-orbit splitting by means of thin-film nanofabrication.
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收藏
页数:4
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