Composition modulation analysis of InxGa1-xP layers grown on (001) germanium substrates

被引：1
|
作者：
Pastore, C. E. [1 ]
Araujo, D. [1 ]
Gutierrez, M. [1 ]
Miguel-Sanchez, J.
Rodriguez-Messmer, E.
机构：
[1] Univ Cadiz, Dept Ciencia Mat & IM & QI, Puerto Real 11510, Spain
来源：
APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 18期
关键词：
Electron microscopy; Photovoltaic; Germanium; InGaP; Phase separation; VAPOR-PHASE EPITAXY; STEP STRUCTURE; BAND-GAP; TEMPERATURE; CONTRAST; DEFECTS;
D O I：
10.1016/j.apsusc.2010.03.019
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The development of new photovoltaic approach to improve costs and efficiencies is focused on the new materials and new technologies. InGaP is, in this sense, a key material for solar conversion. In particular, in the solar concentration approach, this material is part of multiple junction solar cells. Its low lattice mismatch with germanium and its adequate bandgap make it very promising. This paper shows how compositional modulation can affect the InGaP emitter and the AlGaAs tunnel junctions. The influence of the growth conditions, on the compositional modulation and misfit and threading dislocations, in In0.49Ga0.51P layers is demonstrated by TEM on purposely grown single InGaP layers. High resolution electron microscopy (HREM) intensity profiles showed no elastic lattice related modulation. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：5681 / 5683
页数：3
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