Formation of nanostructures by the activated Stranski-Krastanow transition method

被引：23

作者：

Chiu, CH ^{[1
]}

Huang, Z ^{[1
]}

Poh, CT ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Mat Sci, Singapore 117543, Singapore

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.93.136105

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose that self-assembly of complicated nanocrystals can be realized by making patterns on the surface of the Stranski-Krastanow systems with the film thickness in a special range that gradual surface undulation is prohibited but island nucleation can be effected. The method has the potential to control the locations, the size, and the shapes of the self-assembled nanocrystals.

引用

页码：136105 / 1

页数：4

共 50 条

[31] Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
Norris, D. J.
Qiu, Y.
Dobbie, A.
Myronov, M.
Walther, T.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (01)
[32] How InGaAs islands form on GaAs substrates: the missing link in the explanation of the Stranski-Krastanow transition
Walther, T
Cullis, AG
Norris, DJ
Hopkinson, M
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 85 - 88
[33] Experimental evidence of two-dimensional-three-dimensional transition in the Stranski-Krastanow coherent growth
Berti, M
Drigo, AV
Rossetto, G
Torzo, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05): : 1794 - 1799
[34] New insight into the kinetics of Stranski-Krastanow growth of Ge on Si(001)
Le Thanh, V
SURFACE SCIENCE, 2001, 492 (03) : 255 - 269
[35] Critical layer thickness in Stranski-Krastanow growth of Ge on Si(001)
Varga, K
Wang, LG
Pantelides, ST
Zhang, ZY
SURFACE SCIENCE, 2004, 562 (1-3) : L225 - L230
[36] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100)
EAGLESHAM, DJ
CERULLO, M
PHYSICAL REVIEW LETTERS, 1990, 64 (16) : 1943 - 1946
[37] Elastic energy release rate of quantum islands in Stranski-Krastanow growth
Yang, B
JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) : 3704 - 3710
[38] Kinetics of atomic surface transformation during Stranski-Krastanow growth mode
Brunev, D. V.
Karpov, A. N.
Neizvestny, I. G.
Shwartz, N. L.
Yanovitskaya, Z. Sh.
International Journal of Nanoscience, Vol 3, Nos 1 and 2, 2004, 3 (1-2): : 9 - 17
[39] Stranski-Krastanow MOVPE growth of nanoscale ZnTe islands on (001)GaAs
Leo, G
Longo, M
Lovergine, N
Mazzer, M
Mancini, AM
Berti, M
Drigo, AV
JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1332 - 1334
[40] Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrate
Banerjee, S.
Halder, N.
Chakrabarti, S.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (04): : 791 - 795

← 1 2 3 4 5 →