TDDB and voltage-ramp reliability of SiC-base dielectric diffusion barriers in Cu/low-k interconnects

被引：8

作者：

Jow, K ^{[1
]}

Alers, GB ^{[1
]}

Sanganeria, M ^{[1
]}

Harm, G ^{[1
]}

Fu, H ^{[1
]}

Tang, X ^{[1
]}

Kooi, G ^{[1
]}

Ray, GW ^{[1
]}

Danek, M ^{[1
]}

机构：

[1] Novellus Syst, San Jose, CA 95134 USA

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

D O I：

10.1109/RELPHY.2003.1197824

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Failure modes for inter-level dielectric layers under accelerated test conditions are evaluated for copper / low-k interconnects. The dominate failure mode at high voltage stress conditions appears to be mechanical cracking at the dielectric barrier / low-k interface. A simple model for the electrostatic force between interdigitated lines is able to account for the failure with certain assumptions about interfacial adhesion strength of the dielectric diffusion barrier.

引用

页码：598 / 599

页数：2

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