Synthesis and Electron-Beam Evaporation of Gadolinium-Doped Ceria Thin Films

被引:6
|
作者
Kalyk, Fariza [1 ,2 ]
Zalga, Arturas [3 ]
Vasiliauskas, Andrius [2 ]
Tamulevicius, Tomas [1 ,2 ]
Tamulevicius, Sigitas [1 ,2 ]
Abakeviciene, Brigita [1 ,2 ]
机构
[1] Kaunas Univ Technol, Dept Phys, Studentu St 50, LT-51368 Kaunas, Lithuania
[2] Kaunas Univ Technol, Inst Mat Sci, K Barsausko St 59, LT-51423 Kaunas, Lithuania
[3] Vilnius Univ, Fac Chem & Geosci, Dept Appl Chem, Naugarduko St 24, LT-03225 Vilnius, Lithuania
关键词
gadolinium-doped ceria; GDC; co-precipitation synthesis; electron-beam evaporation; thin films; SOFC; impedance spectroscopy; OXIDE FUEL-CELLS; CONDUCTIVITY PROPERTIES; COMBUSTION SYNTHESIS; STABILIZED ZIRCONIA; IONIC-CONDUCTIVITY; GDC ELECTROLYTE; X-RAY; TEMPERATURE; SOFC; INTERMEDIATE;
D O I
10.3390/coatings12060747
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gadolinium-doped ceria (GDC) nanopowders, prepared using the co-precipitation synthesis method, were applied as a starting material to form ceria-based thin films using the electron-beam technique. The scanning electron microscopy (SEM )analysis of the pressed ceramic pellets' cross-sectional views showed a dense structure with no visible defects, pores, or cracks. The AC impedance spectroscopy showed an increase in the total ionic conductivity of the ceramic pellets with an increase in the concentration of Gd2O3 in GDC. The highest total ionic conductivity was obtained for Gd0.1Ce0.9O2-delta (sigma(total) is 11 x 10(-3) S.cm(-1) at 600 degrees C), with activation energies of 0.85 and 0.67 eV in both the low- and high-temperature ranges, respectively. The results of the X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma optical emission spectrometer (ICP-OES) measurements revealed that the stoichiometry for the evaporated thin films differs, on average, by similar to 28% compared to the target material. The heat-treatment of the GDC thin films at 600 degrees C, 700 degrees C, 800 degrees C, and 900 degrees C for 1 h in the air had a minor effect on the surface roughness and the morphology. The results of Raman spectroscopy confirmed the improvement of the crystallinity for the corresponding thin films. The optimum heat-treating temperature for thin films does not exceed 800 degrees C.
引用
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页数:16
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