A monolithic ultrahigh-speed InAlAs/InGaAs PIN-HBT photoreceiver with a bandwidth of 18.6GHz

被引：0

作者：

Yang, K

GutierrezAitken, AL

Zhang, X

Bhattacharya, P

Haddad, GI

机构：

来源：

COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An ultrahigh-speed InAlAs/InGaAs PIN-HBT OEIC photoreceiver was fabricated and characterized. A transimpedance amplifier with a 500 Omega feedback resistor demonstrated a -3 dB bandwidth of 20GHz and a gain of 46 dB Omega. The fabricated photoreceiver integrated with a 83 mu m(2) p-i-n photodiode demonstrated a -3 dB optical bandwidth of 18.6 GHz with an input optical dynamic range of 20 dB. Clear eye diagrams were obtained up to the 12 Gb/s limit of the pattern generator. Large-signal transient simulations indicate that the measured bandwidth of 18.6 GHz, the highest reported to date for any integrated front-end photoreceiver, is sufficient for 24 Gb/s operation.

引用

页码：1097 / 1102

页数：6

共 24 条

[21] HIGH-SPEED, MONOLITHICALLY INTEGRATED PIN-HEMT PHOTORECEIVER FABRICATED ON INP WITH 18GHZ BANDWIDTH
KLEPSER, BUH
SPICHER, J
BECK, M
BERGAMASCHI, C
PATRICK, W
BACHTOLD, W
ELECTRONICS LETTERS, 1995, 31 (21) : 1831 - 1833
[22] 23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product
Huber, D
Bitter, M
Romier, S
Schnyder, I
Bauknecht, R
Morf, T
Bergamaschi, C
Jackel, H
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 447 - 450
[23] High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with a tunable bandwidth up to 22 GHz using a novel circuit design
Klepser, BUH
Spicher, J
Bergamaschi, C
Patrick, W
Bachtold, W
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 443 - 446
[24] ULTRAHIGH-SPEED 1.55-MU-M LAMBDA-4-SHIFTED DFB PIQ-BH LASERS WITH BANDWIDTH OF 17-GHZ
UOMI, K
NAKANO, H
CHINONE, N
ELECTRONICS LETTERS, 1989, 25 (10) : 668 - 669

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