A monolithic ultrahigh-speed InAlAs/InGaAs PIN-HBT photoreceiver with a bandwidth of 18.6GHz

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作者：
Yang, K
GutierrezAitken, AL
Zhang, X
Bhattacharya, P
Haddad, GI
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来源：
COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷
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O4 [物理学];
学科分类号：
0702 ;
摘要：
An ultrahigh-speed InAlAs/InGaAs PIN-HBT OEIC photoreceiver was fabricated and characterized. A transimpedance amplifier with a 500 Omega feedback resistor demonstrated a -3 dB bandwidth of 20GHz and a gain of 46 dB Omega. The fabricated photoreceiver integrated with a 83 mu m(2) p-i-n photodiode demonstrated a -3 dB optical bandwidth of 18.6 GHz with an input optical dynamic range of 20 dB. Clear eye diagrams were obtained up to the 12 Gb/s limit of the pattern generator. Large-signal transient simulations indicate that the measured bandwidth of 18.6 GHz, the highest reported to date for any integrated front-end photoreceiver, is sufficient for 24 Gb/s operation.
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页码：1097 / 1102
页数：6
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