Micromagnetic study of hotspot and thermal effects on spin-transfer switching in magnetic tunnel junctions
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作者:
Zhang, Yisong
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机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Zhang, Yisong
Zhang, Zongzhi
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Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Zhang, Zongzhi
[1
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Liu, Yaowen
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机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Liu, Yaowen
Kang, Zhixiong
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机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Kang, Zhixiong
Ma, B.
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机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Ma, B.
Jin, Q. Y.
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机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Jin, Q. Y.
机构:
[1] Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[3] Tongji Univ, Dept Phys, Shanghai 200092, Peoples R China
The hotspot and current self-heating effects on the spin-transfer-induced magnetization switching are investigated for low resistance magnetic tunnel junctions. Two kinds of spin torque theories, one for ohmic-like conduction from randomly distributed hotspots and the other for tunnel conduction from an insulator barrier, are combined together in this study by using a parallel resistor model. We find that the spin torque amplitude is locally enhanced in the hotspot region due to the large current density, which leads to a strong reduction of the current switching threshold (J(c)), in a way that the enhanced spin torque induces the local magnetization near the hotspot switching first, and then drives the switching spreading through the whole free layer. The current self-heating effect is also studied; the free layer temperature increases only a few degrees at an applied current close to J(c)similar to 1x10(7) A/cm(2), which results in a slight decrease in J(c) for the low resistance junctions with hotspots. (c) 2007 American Institute of Physics.