Micromagnetic study of hotspot and thermal effects on spin-transfer switching in magnetic tunnel junctions
被引:3
|
作者:
Zhang, Yisong
论文数: 0引用数: 0
h-index: 0
机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Zhang, Yisong
Zhang, Zongzhi
论文数: 0引用数: 0
h-index: 0
机构:
Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R ChinaFudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Zhang, Zongzhi
[1
]
Liu, Yaowen
论文数: 0引用数: 0
h-index: 0
机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Liu, Yaowen
Kang, Zhixiong
论文数: 0引用数: 0
h-index: 0
机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Kang, Zhixiong
Ma, B.
论文数: 0引用数: 0
h-index: 0
机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Ma, B.
Jin, Q. Y.
论文数: 0引用数: 0
h-index: 0
机构:Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
Jin, Q. Y.
机构:
[1] Fudan Univ, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[3] Tongji Univ, Dept Phys, Shanghai 200092, Peoples R China
The hotspot and current self-heating effects on the spin-transfer-induced magnetization switching are investigated for low resistance magnetic tunnel junctions. Two kinds of spin torque theories, one for ohmic-like conduction from randomly distributed hotspots and the other for tunnel conduction from an insulator barrier, are combined together in this study by using a parallel resistor model. We find that the spin torque amplitude is locally enhanced in the hotspot region due to the large current density, which leads to a strong reduction of the current switching threshold (J(c)), in a way that the enhanced spin torque induces the local magnetization near the hotspot switching first, and then drives the switching spreading through the whole free layer. The current self-heating effect is also studied; the free layer temperature increases only a few degrees at an applied current close to J(c)similar to 1x10(7) A/cm(2), which results in a slight decrease in J(c) for the low resistance junctions with hotspots. (c) 2007 American Institute of Physics.
机构:
Calif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA
Univ Kassel, Inst Theoret Phys, D-34132 Kassel, GermanyCalif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA
Kalitsov, Alan
Chshiev, Mairbek
论文数: 0引用数: 0
h-index: 0
机构:
Univ Alabama, MINT Ctr, Tuscaloosa, AL USA
CEA, SPINTEC, CNRS, URA 2512, F-38054 Grenoble, FranceCalif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA
Chshiev, Mairbek
Theodonis, Ioannis
论文数: 0引用数: 0
h-index: 0
机构:
Calif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA
Natl Tech Univ Athens, Dept Phys, GR-15773 Athens, GreeceCalif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA
Theodonis, Ioannis
Kioussis, Nicholas
论文数: 0引用数: 0
h-index: 0
机构:
Calif State Univ Northridge, Dept Phys, Northridge, CA 91330 USACalif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA
Kioussis, Nicholas
Butler, W. H.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Alabama, MINT Ctr, Tuscaloosa, AL USACalif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA