Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers

被引：15

作者：

Bour, D

Troccoli, M

Capasso, F

Corzine, S

Tandon, A

Mars, D

Höfler, G

机构：

[1] Agilent Labs, Photon & Elect Res Lab, Palo Alto, CA 94304 USA

[2] Harvard Univ, Cruft Lab, Div Engn & Appl Sci, Cambridge, MA 02139 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

metalorganic vapor phase epitaxy; quantum wells; semiconducting III-V materials; heterojunction semiconductor devices; laser diodes;

D O I：

10.1016/j.jcrysgro.2004.08.048

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown 30-stage AtInAs-GaInAs quantum cascade laser structures by low-pressure metalorganic vaporphase epitaxy (MOVPE). The growth rate for the active region was set very low (0.1 nm/s), and growth stops were employed at all interfaces. The devices were operated pulsed at room temperature, with a threshold current density of 2.8 kA/cm(2), a lasing wavelength of 7.6mum, and a peak power of 150mW. CW operation was achieved up to a temperature of 180 K. These characteristics compare favorably with MBE-grown QC lasers of similar structure. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：526 / 530

页数：5

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