Simultaneous two-state lasing in quantum-dot lasers

被引：265
|
作者：
Markus, A [1 ]
Chen, JX
Paranthoën, C
Fiore, A
Platz, C
Gauthier-Lafaye, O
机构：
[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland
[2] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy
[3] INSA Rennes, Phys Solides Lab, F-35043 Rennes, France
[4] Alcatel CIT, Opto Plus, F-91461 Marcoussis, France
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 12期
关键词：
D O I：
10.1063/1.1563742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate simultaneous lasing at two well-separated wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, we attribute it to incomplete clamping of the ES population at the GS threshold. (C) 2003 American Institute of Physics.
引用
收藏
页码：1818 / 1820
页数：3
相关论文
共 50 条
  • [41] Nonlinear Dynamics of Two-State Quantum Dot Lasers under Optical Feedback
    Wang, Xiang-Hui
    Wu, Zheng-Mao
    Jiang, Zai-Fu
    Xia, Guang-Qiong
    PHOTONICS, 2021, 8 (08)
  • [42] Dual-Wavelength Lasing in Quantum-Dot Plasmonic Lattice Lasers
    Winkler, Jan M.
    Ruckriegel, Max J.
    Rojo, Henar
    Keitel, Robert C.
    De Leo, Eva
    Rabouw, Freddy T.
    Norris, David J.
    ACS NANO, 2020, 14 (05) : 5223 - 5232
  • [43] Dynamic behavior of injection-locked two-state quantum dot lasers
    Dehghaninejad, Amin
    Sheikhey, Mohammad Mohsen
    Baghban, Hamed
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2019, 36 (06) : 1518 - 1524
  • [44] Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer
    Shoji, H
    Nakata, Y
    Mukai, K
    Sugiyama, Y
    Sugawara, M
    Yokoyama, N
    Ishikawa, H
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 188 - 195
  • [45] Impact of the carrier relaxation paths on two-state operation in quantum dot lasers
    Sokolovskii, G. S.
    Dudelev, V. V.
    Kolykhalova, E. D.
    Soboleva, K. K.
    Deryagin, A. G.
    Novikov, I. I.
    Maximov, M. V.
    Zhukov, A. E.
    Ustinov, V. M.
    Kuchinskii, V. I.
    Sibbett, W.
    Rafailov, E. U.
    Viktorov, E. A.
    Erneux, T.
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIII, 2015, 9357
  • [46] Quantum-dot lasers
    Eberl, K
    PHYSICS WORLD, 1997, 10 (09) : 47 - 50
  • [47] Quantum-dot lasers
    Schweizer, H
    Jetter, M
    Scholz, F
    SINGLE QUANTUM DOTS: FUNDAMENTALS, APPLICATIONS AND NEW CONCEPTS, 2003, 90 : 185 - 235
  • [48] Lasing due to the excited state in quantum dot lasers
    Abusaa, M.
    Danckaert, J.
    Viktorov, E. A.
    FRONTIERS IN THEORETICAL AND APPLIED PHYSICS/UAE 2017 (FTAPS 2017), 2017, 869
  • [49] Modal Gain and Photoluminescence Investigation of Two-State Lasing in GaAs-Based 1.3 μm InAs/InGaAs Quantum Dot Lasers
    Liu, Chongyang
    Wang, Hong
    Meng, Qianqian
    Gao, Bo
    Ang, Kian Siong
    APPLIED PHYSICS EXPRESS, 2013, 6 (10)
  • [50] Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers
    Cao, Q.
    Yoon, S. F.
    Tong, C. Z.
    Ngo, C. Y.
    Liu, C. Y.
    Wang, R.
    Zhao, H. X.
    APPLIED PHYSICS LETTERS, 2009, 95 (19)
12345