Studies on the retention behavior of SrBi2Ta2O9 thin films

被引：2
|
作者：
Zhang, ZG
Zhu, JS
Liu, JS
Lu, XM
Yan, F
Wang, YN [1 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Tsing Hua Univ, Ctr Adv Studies, Beijing 100084, Peoples R China
来源：
THIN SOLID FILMS | 2000年 / 375卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
ferroelectric properties; retention; polarization decay; depolarization field;
D O I：
10.1016/S0040-6090(00)01245-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The retention properties of SrBi2Ta2O9 (SBT) thin films are to be studied. Within the first second, the polarization decay increases with increasing of the write/read voltage, and tends to steady value. This could be ascribed to the depolarization fields, which increases with increasing retained polarization. However, the polarization loss is found to be different with various write/read voltages over a range of 1-30 000 s. The effect of ultra-violet irradiation on SET retention is also to be investigated. Experiments indicate that there was weak pinning of domain walls existing in SET. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：180 / 183
页数：4
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