Asymmetric micro-supercapacitors based on electrodeposited Ruo2 and sputtered VN films

被引:81
|
作者
Asbani, Bouchra [1 ,2 ]
Robert, Kevin [1 ,2 ]
Roussel, Pascal [3 ]
Brousse, Thierry [2 ,4 ]
Lethien, Christophe [1 ,2 ]
机构
[1] Univ Polytech Hauts De France, Univ Lille, Inst Elect Microelect & Nanotechnol, CNRS,Cent Lille,UMR 8520,IEMN, F-59000 Lille, France
[2] CNRS, Reseau Stockage Electrochim Energie RS2E, FR 3459, 33 Rue St Leu, F-80039 Amiens, France
[3] Univ Artois, Univ Lille, Unitede Catalyse & Chim Solide UCCS, CNRS,Cent Lille,UMR 8181,UCCS, F-59000 Lille, France
[4] Univ Nantes, Inst Mat Jean Rouxel IMN, CNRS, UMR 6502, 2 Rue Houssiniere,BP32229, F-44322 Nantes 3, France
关键词
Asymmetric micro-supercapacitors; Electrodeposition; Hydrous ruthenium oxide; Vanadium nitride; Thin films; Sputtering;
D O I
10.1016/j.ensm.2021.02.006
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Research on micro-supercapacitors remains one of the most important activities in the area of electrochemical energy storage for powering smart and miniaturized electronic devices. Here we design an asymmetric microsupercapacitor (A-MSC) combining sputtered vanadium nitride film (VN) and electrodeposited hydrous ruthenium oxide (hRuO(2)) film. Taking advantage of their complementary electrochemical potential windows in 1 M KOH electrolyte, the A-MSC achieves a cell voltage up to 1.15 V, associated to high specific capacitance values for the device (approximate to 100 mF cm(-2)). The energy density of this asymmetric VN/hRuO(2) micro-supercapacitor reaches 20 mu Wh cm(-2) at a power density of 3 mW cm(-2). Taking benefit from the asymmetric configuration, a 5-fold enhancement factor in energy density is demonstrated for the VN/hRuO(2) asymmetric micro-supercapacitor as compared to symmetric VN/VN and hRuO(2)/hRuO(2) microdevices.
引用
收藏
页码:207 / 214
页数:8
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