1.5 μm wavelength strain-compensated GaInAsP/InP wirelike lasers by CH4/H2 reactive ion etching

In order to reduce non-radiative recombinations due to a large lattice mismatch at the etched / regrown interfaces, 1.5 mu m GaInAsP/InP lasers with narrow wirelike (43 nm and 70 nm) active regions, which consist of partially strain-compensated 5 multiple-quantum-well structure, were realized for the first time by using EB lithography, CH4/H2- reactive ion etching, and organo-metallic vapor-phase-epitaxy regrowth. As the result, lower threshold current and higher differential quantum efficiency than those of planar 5 multiple-quantum-well lasers were obtained at temperature up to 80 degrees C. The slope efficiency of edge emitted spontaneous emission power of these wirelike lasers was almost the same as that of one-step grown 5 multiple-quantum-well lasers. These results indicate that high quality etched / regrown interfaces can be obtained with GaInAsP/InP fine structures.