Reverse resistance switching in polycrystalline Nb2O5 films

被引：9

作者：

Jo, Younghun ^{[1
]}

Sim, Hyunjun ^{[2
]}

Hwang, Hyunsang ^{[2
]}

Ahn, Ken ^{[3
]}

Jung, Myung-Hwa ^{[4
]}

机构：

[1] Korea Basic Sci Inst, Nano Mat Res Team, Taejon 305333, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

[4] Sogang Univ, Dept Phys, Seoul 121742, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 20期

关键词：

Resistance switching; Percolation; Magnetic polaron; Niobium oxides; NIO FILMS; OXIDE-FILMS; THIN-FILMS; MANGANITES;

D O I：

10.1016/j.tsf.2009.10.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reverse resistance switching is observed in polycrystalline Nb2O5 film, which is one of promising candidates for nonvolatile resistance random access memory (ReRAM) devices. This reverse switching is compared with the usual behavior, in which the switching voltage V-LH from low resistance (LR) to high resistance (HR) states is lower than V-HL from HR to LR states. Based on these experiments, we propose a phenomenological mechanism for the resistance switching, which assumes the coexistence of LR and HR phases and the percolation transition. (C) 2009 Published by Elsevier B.V.

引用

页码：5676 / 5678

页数：3

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