Annealing behavior of InAs/GaAs quantum dot structures

被引：11
|
作者：
Wang, ZM [1 ]
Feng, SL [1 ]
Lu, ZD [1 ]
Zhao, Q [1 ]
Yang, XP [1 ]
Chen, ZG [1 ]
Xu, ZY [1 ]
Zheng, HZ [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 02期
基金：
中国国家自然科学基金;
关键词：
annealing; InAs/GaAs; quantum dots;
D O I：
10.1007/s11664-998-0188-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the annealing behavior of InAs layers with different thicknesses in a GaAs matrix. The diffusion enhancement by strain, which is well established in strained quantum wells, occurs in InAs/GaAs quantum dots (QDs). A shift of the QD luminescence peak toward higher energies results from this enhanced diffusion. In the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected.
引用
收藏
页码：59 / 61
页数：3
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