Hetero-epitaxy of SrTiO3 on Si and control of the interface

被引：9
|
作者：
Delhaye, G. [1 ]
El Kazzi, M. [1 ]
Gendry, M. [1 ]
Hollinger, G. [1 ]
Robach, Y. [1 ]
机构：
[1] Ecole Cent Lyon, LEOM, F-69134 Ecully, France
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 16期
关键词：
molecular beam epitaxy; SrTiO3; integration on Si;
D O I：
10.1016/j.tsf.2006.11.187
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this article, we address some critical issues to the hetero-epitaxial growth of SrTiO3 on Si, with emphasis on the interface properties. A two-step growth process allows us to obtain oxide films with high crystallinity, and prevent the formation of an amorphous silicon oxide at the interface. The chemical and structural properties of the interface were evaluated using reflection high energy electron diffraction and X-ray photoelectron spectroscopy. Conditions of hetero-epitaxial growth were first calibrated by a preliminary study of the homo-epitaxial growth of SrTiO3. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：6332 / 6336
页数：5
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