Bipolar Resistive Switching Characteristics of Cu/TaOx/Pt Structures

被引：12
|
作者：
Cha, D. [1 ]
Lee, S. [1 ]
Jung, J. [1 ]
An, I. [1 ]
Kim, D. -W. [2 ]
机构：
[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea
[2] Ewha Womans Univ, Dept Phys, Dept Chem & Nano Sci, Seoul 120750, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 56卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Ionic memory switching; Tantalum oxide; Sputtering; MEMORIES;
D O I：
10.3938/jkps.56.846
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport; analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaOx layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 10(3), and the switching voltage was less than 1 V.
引用
收藏
页码：846 / 850
页数：5
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