Femtosecond laser ablation of crystals SiO2 and YAG

被引：46
|
作者：
Xu, Shizhen [1 ]
Qiu, Jianrong
Jia, Tianqing
Li, Chengbin
Sun, Haiyi
Xu, Zhizhan
机构：
[1] Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
来源：
OPTICS COMMUNICATIONS | 2007年 / 274卷 / 01期
基金：
中国国家自然科学基金;
关键词：
avalanche ionization; photoionization; femtosecond laser; damage threshold; SiO2; YAG;
D O I：
10.1016/j.optcom.2007.01.079
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Damage threshold of crystals SiO2 and YAG against 60-900 fs, 800 nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO2, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：163 / 166
页数：4
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