Femtosecond laser ablation of crystals SiO2 and YAG

被引：46
|
作者：
Xu, Shizhen [1 ]
Qiu, Jianrong
Jia, Tianqing
Li, Chengbin
Sun, Haiyi
Xu, Zhizhan
机构：
[1] Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
来源：
OPTICS COMMUNICATIONS | 2007年 / 274卷 / 01期
基金：
中国国家自然科学基金;
关键词：
avalanche ionization; photoionization; femtosecond laser; damage threshold; SiO2; YAG;
D O I：
10.1016/j.optcom.2007.01.079
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Damage threshold of crystals SiO2 and YAG against 60-900 fs, 800 nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO2, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：163 / 166
页数：4
相关论文
共 50 条
  • [1] Evaluating femtosecond laser ablation of graphene on SiO2/Si substrate
    Dong, Tianqi
    Sparkes, Martin
    Durkan, Colm
    O'Neill, William
    JOURNAL OF LASER APPLICATIONS, 2016, 28 (02)
  • [2] Threshold and incubation effect of femtosecond laser ablation of YAG crystals
    Shang, Tao
    Deng, Guoliang
    Wang, Jun
    Wu, Jie
    Cai, Rui
    Chen, Rubo
    Xu, Yunlong
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2024, 53 (03):
  • [3] Femtosecond laser irradiation on YAG and sapphire crystals
    Jiang, CY
    Zhou, GQ
    Xu, J
    Deng, PZ
    Gan, FX
    JOURNAL OF CRYSTAL GROWTH, 2004, 260 (1-2) : 181 - 185
  • [4] Crystallization of Ge in SiO2 matrix by femtosecond laser processing
    Salihoglu, Omer
    Kurum, Ulas
    Yaglioglu, Halime Gul
    Elmali, Ayhan
    Aydinli, Atilla
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (01):
  • [5] Femtosecond laser ablation of Cr-SiO2 binary mask
    Okamoto, T
    Morishige, Y
    Ohmura, E
    Sano, T
    Miyamoto, I
    THIRD INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION, 2003, 4830 : 510 - 514
  • [6] DEPOSITION OF SIO2 BY REACTIVE EXCIMER LASER ABLATION FROM A SIO TARGET
    FOGARASSY, E
    SLAOUI, A
    FUCHS, C
    STOQUERT, JP
    APPLIED SURFACE SCIENCE, 1990, 46 (1-4) : 195 - 199
  • [7] Fabrication of SiO2 thin films by laser ablation of silicone
    Okoshi, M
    Kuramatsu, M
    Inoue, N
    CLEO(R)/PACIFIC RIM 2001, VOL I, TECHNICAL DIGEST, 2001, : 44 - 45
  • [8] Ablation of amorphous SiO2 using ArF excimer laser
    Awazu, K
    LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2000, PROCEEDINGS, 2001, 4347 : 169 - 176
  • [9] Picosecond laser ablation of SiO2 layers on silicon substrates
    Sonja Hermann
    Nils-Peter Harder
    Rolf Brendel
    Dirk Herzog
    Heinz Haferkamp
    Applied Physics A, 2010, 99 : 151 - 158
  • [10] Picosecond laser ablation of SiO2 layers on silicon substrates
    Hermann, Sonja
    Harder, Nils-Peter
    Brendel, Rolf
    Herzog, Dirk
    Haferkamp, Heinz
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (01): : 151 - 158
12345