Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method

被引：6

作者：

Lee, Ho Yun ^{[1
]}

Yang, Im Jeong ^{[2
]}

Yoon, Jang-Hee ^{[3
]}

Jin, Sung-Ho ^{[4
,5
]}

Kim, Seohan ^{[6
]}

Song, Pung Keun ^{[1
]}

机构：

[1] Pusan Natl Univ, Dept Mat Sci & Engn, Busan 46241, South Korea

[2] Pusan Natl Univ, Dept Phys, Busan 46241, South Korea

[3] Korea Basic Sci Inst, Busan Ctr, Busan 46742, South Korea

[4] Pusan Natl Univ, Grad Dept Chem Mat, Dept Chem Educ, Busan 46241, South Korea

[5] Pusan Natl Univ, Inst Plast Informat & Energy Mat, Busan 46241, South Korea

[6] Pusan Natl Univ, Mat Technol Res Inst, Busan 46241, South Korea

来源：

COATINGS | 2019年 / 9卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

zinc-doped In-Sn-O thin film; thermal conductivity of thin film; transparent amorphous oxide semiconductor; magnetron co-sputtering; thermoelectric figure of merit (ZT); RAY PHOTOELECTRON-SPECTROSCOPY; NANOSPHERES; TEMPERATURE; STABILITY; POWER; HEAT;

D O I：

10.3390/coatings9120788

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermoelectric properties of In-Sn-O (ITO) thin films were estimated in relation to microstructures with various zinc concentrations. The zinc-doped ITO (ITO:Zn) thin films were amorphized with increasing zinc concentration. The carrier density (n) of the thin films decreased as the zinc content increased, which could be attributed to a decline in oxygen vacancies. The highest Seebeck coefficient (S, 64.91 mu V/K) was obtained with an ITO film containing 15.33 at.% of Zn due to the low n value, which also exhibited the highest power factor (234.03 mu W K-2 m(-1)). However, the highest thermoelectric figure of merit value (0.0627) was obtained from the film containing 18.26 at.% of Zn because of both low n and the lowest thermal conductivity (kappa) (1.085 W m(-1)K(-1)). The total kappa decreased as increasing zinc concentration in the thin films. It was confirmed that the decrease of total kappa was dominated by electron kappa rather than lattice kappa.

引用

页数：10

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