In-situ monitoring of PE-CVD growth of TiO2 films with laser Raman spectroscopy

被引：13
|
作者：
Nishida, K
Morisawa, K
Hiraki, A
Muraishi, S
Katoda, T
机构：
[1] Kochi Univ Technol, Dept Elect & Photon Syst Engn, Kochi 7828502, Japan
[2] JEOL Ltd, Tokyo 1968558, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 159卷
关键词：
in-situ monitoring; TiO2; PE-CVD; Raman spectroscopy; hetero-interface;
D O I：
10.1016/S0169-4332(00)00067-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A new plasma-enhanced chemical vapor deposition (CVD) system with an in-situ monitoring system by laser Raman spectroscopy was developed by which it is possible to obtain Raman spectra even when the thickness of a TiO2 film is only about 27.5 Angstrom. A peak corresponding to titanium silicide was observed at the early growth stage of TiO2. It was made clear that titanium silicide decomposes with the process of growth and plays a role in the conversion of amorphous titanium dioxide to a crystalline one and enhances the growth of crystal. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：143 / 148
页数：6
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