Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane

被引：15

作者：

Yasui, K ^{[1
]}

Asada, K ^{[1
]}

Akahane, T ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 159卷

基金：

日本学术振兴会;

关键词：

wide bandgap semiconductor; SiC; epitaxy; triode plasma; Langmuir probe;

D O I：

10.1016/S0169-4332(00)00047-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The epitaxial growth of cubic-silicon carbide (SiC) on Si substrates was carried out by triode plasma CVD using dimethylsilane (DMS) as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by applying negative grid bias and adding bypass condensers between cathode and grid electrode. The substrate temperature was rapidly raised from 500 degrees C to the growth temperatures in the flow of hydrogen and DMS, followed by the epitaxial growth. By this growth procedure, the SiC films with good surface morphology were grown. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：556 / 560

页数：5

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