Recessed gate normally-OFF Al2O3/lnAIN/GaN MOS-HEMT on silicon

被引：11
|
作者：
Freedsman, Joseph J. [1 ]
Watanabe, Arata [1 ]
Ito, Tatsuya [1 ]
Egawa, Takashi [1 ]
机构：
[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Nagoya, Aichi 4668555, Japan
来源：
APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期
基金：
日本科学技术振兴机构;
关键词：
BREAKDOWN VOLTAGE; DENSITY;
D O I：
10.7567/APEX.7.104101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, a gate-recessed Al2O3/lnAIN/GaN normally-OFF metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) on Si is reported. The fabricated MOS-HEMT with a gate length of 1.5 mu m features a high drain current density of 840 mA/mm at a gate bias (V-gs) of +8 V, a low specific ON-resistance of 0.8 m Omega.cm(2), and a threshold voltage of +1.9V. The Al2O3/lnAIN/GaN MOS-HEMT also exhibits a low gate leakage current (similar to 10(-8)mA/mm at Vgs = +8V) and a maximum peak field-effect mobility of 472 cm(2)V(-1)s(-1). The OFF-state breakdown voltage of the device (L-gd = 4 mu m) is 278 V at V-gs = 0V. (C) 2014 The Japan Society of Applied Physics
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页数：3
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