Recombination luminescence of CsI(Tl) under electron pulse irradiation

被引：7
|
作者：
Trefilova, L. [1 ]
Yakovlev, V. [2 ]
Meleshko, A. [2 ]
Kosinov, N. [1 ]
机构：
[1] Inst Scintillat Mat, UA-61001 Kharkov, Ukraine
[2] Tomsk Polytech Univ, Tomsk 634034, Russia
来源：
RADIATION MEASUREMENTS | 2010年 / 45卷 / 3-6期
关键词：
Thallium-doped cesium iodide; Luminescence; Internal photo-effect; CRYSTALS; CENTERS;
D O I：
10.1016/j.radmeas.2009.10.099
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (E(e) = 250 key, t(1/2) = 10 ns, j = 2 divided by 160 mJ/cm(2)) has been studied. It has been discovered that the slow emission rise is due to hole V(k)-Tl(0) recombination luminescence at temperature from 100 to 160 K and electron-V(kA) recombination, where electrons released from single Tl(0) at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：328 / 330
页数：3
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