Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor

被引：49
|
作者：
Xu, ZC [1 ]
Birkedal, D
Juhl, M
Hvam, JM
机构：
[1] Nankai Univ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Minist Educ, Tianjin 300071, Peoples R China
[2] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期
关键词：
D O I：
10.1063/1.1806564
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30degreesC were measured using the Hakki-Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm(-1) and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode. (C) 2004 American Institute of Physics.
引用
收藏
页码：3259 / 3261
页数：3
相关论文
共 50 条
  • [11] High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers
    Salhi, A.
    Martiradonna, L.
    Visimberga, G.
    Tasco, V.
    Fortunato, L.
    Todaro, M. T.
    Cingolani, R.
    Passaseo, A.
    De Vittorio, M.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (13-16) : 1735 - 1737
  • [12] Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers
    Gioannini, M
    Sevega, A
    Montrosset, I
    OPTICAL AND QUANTUM ELECTRONICS, 2006, 38 (4-6) : 381 - 394
  • [13] Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers
    Mariangela Gioannini
    Alberto Sevega
    Ivo Montrosset
    Optical and Quantum Electronics, 2006, 38 : 381 - 394
  • [14] Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers
    Wang, Rui
    Yoon, Soon Fatt
    Zhao, Han Xue
    Ngo, Chun Yong
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (13) : 863 - 865
  • [15] Gain, index variation, and linewidth-enhancement factor in 980-nm quantum-well and quantum-dot lasers
    Rodríguez, D
    Esquivias, I
    Deubert, S
    Reithmaier, JP
    Forchel, A
    Krakowski, M
    Calligaro, M
    Parillaud, O
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (02) : 117 - 126
  • [16] Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers
    Stohs, J
    Gallant, DJ
    Bossert, DJ
    Brueck, SRJ
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V, 1997, 2994 : 542 - 551
  • [17] Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers
    Zhang Fan
    Li Lin
    Ma Xiao-Hui
    Li Zhan-Guo
    Sui Qing-Xue
    Gao Xin
    Qu Yi
    Bo Bao-Xue
    Liu Guo-Jun
    ACTA PHYSICA SINICA, 2012, 61 (05)
  • [18] Linewidth enhancement factor of quantum-dot optical amplifiers
    Vazquez, J. Molina
    Nilsson, H. H.
    Zhang, J. -Z.
    Galbraith, I.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (9-10) : 986 - 993
  • [19] Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers
    Alexandropoulos, D
    Adams, MJ
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) : 3523 - 3536
  • [20] The linewidth enhancement factor α of quantum dot semiconductor lasers
    Melnik, S
    Huyet, G
    OPTICS EXPRESS, 2006, 14 (07) : 2950 - 2955
12345