Application of combinatorial methodologies for work function engineering of metal gate/high-κ advanced gate stacks

被引：9

作者：

Green, M. L. ^{[1
]}

Chang, K.-S.

DeGendt, S.

Schram, T.

Hattrick-Simpers, J.

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Katholieke Univ Leuven, Dept Chem, Louvain, Belgium

[3] IMEC, B-3001 Louvain, Belgium

[4] Univ Maryland, College Pk, MD 20740 USA

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期

关键词：

metal gate electrodes; CMOS; advanced gate stack; combinatorial methodologies;

D O I：

10.1016/j.mee.2007.04.128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper uses combinatorial methodologies to investigate the effect of TaN-AlN metal gate electrode composition on the work function, for (TaN-AlN)/Hf-Si-O/SiO2/Si capacitors. We demonstrate the efficacy of the combinatorial technique by plotting work function for more than thirty Ta1-xAlxNy compositions, with x varying from 0.05 to 0.50. The work function is shown to continuously decrease, from about 4.9 to about 4.7 eV, over this range. Over the same range, oxide fixed charge is seen to go from about -2.5 x 10(12) cm(-3) to about zero. The work functions reported here are about 0.1 eV higher than in a previous study, but are still about 0.2 eV smaller than required for PMOS device applications.

引用

页码：2209 / 2212

页数：4

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