Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

被引：15

作者：

Bethge, O. ^{[1
]}

Abermann, S. ^{[1
]}

Henkel, C. ^{[1
]}

Straif, C. J. ^{[2
]}

Hutter, H. ^{[2
]}

Smoliner, J. ^{[1
]}

Bertagnolli, E. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[2] Vienna Univ Technol, Inst Chem Technol & Analyt, A-1060 Vienna, Austria

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

基金：

奥地利科学基金会;

关键词：

atomic layer deposition; dielectric materials; germanium compounds; MOS capacitors; secondary ion mass spectroscopy; substrates; zirconium compounds; DIELECTRICS; INTERFACE; OXIDES;

D O I：

10.1063/1.3295698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZrO2/GeO2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 degrees C, respectively. The impact of the deposition temperature on the electrical and structural properties of MOS capacitors is investigated. A significant influence of the ALD temperature on the high frequency capacitance in inversion can be observed, resulting in a shift of the minority carrier response time from 1.15 to 0.2 mu s. Time-of-flight secondary ion mass spectroscopy investigations indicate a distinctive depletion of interfacial GeO at higher ALD temperatures, which give rise to trap levels near the oxide/Ge interface.

引用

页数：3

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