Si deposition on CeO2/Si(111)

被引：0

作者：

Shitara, S ^{[1
]}

Yamaguchi, K ^{[1
]}

Yamamoto, Y ^{[1
]}

Satoh, M ^{[1
]}

Inoue, T ^{[1
]}

机构：

[1] Hosei Univ, Coll Engn, Dept Elect Informat, Koganei, Tokyo 184, Japan

来源：

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16 | 1997年

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon films have been deposited on epitaxially grown CeO2 (111)/Si(111) by electron beam evaporation in UHV or under the oxygen partial pressure ranging from 1.5 x 10(-6) to 4.0 x 10(-6) Torr. RES measurement reveals the following; At 800 degrees C the amount of the deposited Si is less than intended. The deposited Si films were polycrystalline due to the reduction of CeO2 at the surface above 750 degrees C. The reduction doesn't occur at the CeO2 surface and SiO2 films don't form at the Si/CeO2 at 700 degrees C. However, the Si film which deposited at 700 degrees C was polycrystalline.

引用

页码：109 / 114

页数：6

共 50 条

[1] Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
Jones, JT
Bridger, PM
Marsh, OJ
McGill, TC
APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1326 - 1328
[2] Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
Jones, J.T.
Bridger, P.M.
Marsh, O.J.
McGill, T.C.
Applied Physics Letters, 75 (09):
[3] Reaction at Si/CeO2(111) interfaces
Arai, S
Shitara, S
Yamamoto, Y
Satoh, M
Inoue, T
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997, 1997, : 115 - 120
[4] DEPOSITION OF CEO2 ON SI(111) STUDIED BY LEED, AES, XPS AND RBS
GUILLAUME, CE
VERMEERSCH, M
SPORKEN, R
VERBIST, JJ
MATHOT, S
DEMORTIER, G
SURFACE AND INTERFACE ANALYSIS, 1994, 22 (1-12) : 186 - 189
[5] ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111)
TYE, L
ELMASRY, NA
CHIKYOW, T
MCLARTY, P
BEDAIR, SM
APPLIED PHYSICS LETTERS, 1994, 65 (24) : 3081 - 3083
[6] Annealing effect of the CeO2 buffer layers for PZT/CeO2/Si(111) structures
Park, BE
Imada, S
Tokumitsu, E
Ishiwara, H
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 32 : S1390 - S1392
[7] Studies of highly oriented CeO2 films grown on Si(111) by pulsed laser deposition
Hirschauer, B
Chiaia, G
Göthelid, M
Karlsson, UO
THIN SOLID FILMS, 1999, 348 (1-2) : 3 - 7
[8] Low temperature growth of CeO2(111) layer on Si(100) using dual plasma deposition
Wang, LP
Tang, BY
Huang, N
Tian, XB
Chu, PK
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2001, 308 (1-2): : 176 - 179
[9] A novel approach to the epitaxial growth of CeO2 films on Si(111)
Zarraga-Colina, J
Nix, RM
Weiss, H
SURFACE SCIENCE, 2004, 563 (1-3) : L251 - L255
[10] EPITAXIAL-GROWTH OF CEO2 FILMS ON SI(111) BY SPUTTERING
YAEGASHI, S
KURIHARA, T
HOSHI, H
SEGAWA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 270 - 274

← 1 2 3 4 5 →