A novel approach to the epitaxial growth of CeO2 films on Si(111)

被引：15
|
作者：
Zarraga-Colina, J
Nix, RM
Weiss, H
机构：
[1] Univ London Queen Mary Coll, Dept Chem, London E1 4NS, England
[2] Otto Von Guericke Univ, Inst Chem, D-39106 Magdeburg, Germany
来源：
SURFACE SCIENCE | 2004年 / 563卷 / 1-3期
关键词：
X-ray photoelectron spectroscopy; low energy electron diffraction (LEED); epitaxy; single crystal epitaxy; silicon; halides; lanthanides;
D O I：
10.1016/j.susc.2004.06.156
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth of epitaxial cerium oxide films on CaF2(1 1 1)/Si(1 1 1) has been studied by XPS, UPS and LEED. Using CaF2 as an intermediate layer between the Si(1 1 1) substrate and cerium oxide, an ordered and fully-oxidised (1 1 1)-oriented CeO2 film was obtained from the very early stages of growth. The prepared CeO2/CaF2/Si(1 1 1) interfaces showed reasonable thermal stability when annealed in oxygen, although fluorine migration into the ceria was evident at high temperatures. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：L251 / L255
页数：5
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