The influence of C60 as intermediate on the diamond nucleation on copper substrate in HFCVD

被引：11
|
作者：
Li, C [1 ]
Feng, KC
Fei, YJ
Yuan, HT
Xiong, Y
Feng, K
机构：
[1] Changchun Univ Sci & Technol, Dept Phys Opt, Changchun 130022, Peoples R China
[2] Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2003年 / 207卷 / 1-4期
关键词：
diamond; CVD; nucleation; SEM; Raman spectra;
D O I：
10.1016/S0169-4332(02)01329-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The diamond films on copper substrates using C-60 as intermediate have been grown by the hot filament chemical vapor deposition (HFCVD) technique. Scanning electron microscopy (SEM) and micro-Raman spectra were used to study the process of diamond nucleation. The UV-Iight pretreatment was beneficial for improving the diamond nucleation. The temperature of the substrate is very important. The C-60 molecule layers with UV-light pretreatment could increase the density of diamond nuclei on copper substrates and enhance the adherence between the copper substrates and diamond films. The long induction time for forming graphite intermediate is not necessary. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：169 / 175
页数：7
相关论文
共 50 条
  • [41] Enhancement of nucleation of diamond films deposited on copper substrate by nickel modification layer
    Liu, Xue-zhang
    Wei, Qiu-ping
    Zhai, Hao
    Yu, Zhi-ming
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2013, 23 (03) : 667 - 673
  • [42] Influence of defects on photoluminescence in C60 crystals
    Tachibana, M
    Nishimura, K
    Komatsu, T
    Sunakawa, T
    Kojima, K
    FULLERENES AND PHOTONICS IV, 1997, 3142 : 229 - 235
  • [43] Nucleation and growth characteristics of metal films on C60 (111) surface
    Xu, WT
    Li, X
    Wang, HQ
    Yang, L
    Wu, ZQ
    Hou, JG
    CHINESE PHYSICS LETTERS, 1998, 15 (04): : 290 - 292
  • [44] Nucleation of a sodium droplet on C60 -: art. no. 205412
    Roques, J
    Calvo, F
    Spiegelman, F
    Mijoule, C
    PHYSICAL REVIEW B, 2003, 68 (20)
  • [45] Influence of charge transfer doping on the morphologies of C60 islands on hydrogenated diamond C(100)-(2 x 1)
    Nimmrich, Markus
    Kittelmann, Markus
    Rahe, Philipp
    Harneit, Wolfgang
    Mayne, Andrew J.
    Dujardin, Gerald
    Kuehnle, Angelika
    PHYSICAL REVIEW B, 2012, 85 (03):
  • [46] Photoluminescence properties of C60 films deposited on silicon substrate
    Capozzi, V
    Celentano, G
    Perna, G
    Lorusso, GF
    Minafra, A
    JOURNAL OF LUMINESCENCE, 2000, 86 (02) : 129 - 135
  • [47] The oriented growth of C60 films on GaAs(100) Substrate
    Wuli Xuebao, 3 (485):
  • [48] Control of binding of C60 molecules to the substrate by Coulomb blockade
    Bozhko, Sergey, I
    Walshe, Killian
    Shvets, Igor, V
    SCIENTIFIC REPORTS, 2019, 9 (1)
  • [49] Modelling the adsorption and imaging of C60 molecules on a graphite substrate
    Rafii-Tabar, H
    Jurczyszyn, L
    Stankiewicz, B
    Czajka, R
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1999, 49 (11) : 1625 - 1629
  • [50] Influence of fullerene C60 on lubrication process in the steel-copper tribo pair clearance
    Shepelevskii, AA
    Shibaev, LA
    Ginzburg, BM
    Bulatov, VP
    RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 1999, 72 (07) : 1265 - 1271
12345