Antiferromagnetic Phase Induced by Nitrogen Doping in 2D Cr2S3

被引:2
|
作者
Zhou, Wenda [1 ,2 ]
Chen, Mingyue [1 ,2 ]
Yuan, Cailei [2 ]
Huang, He [1 ]
Zhang, Jingyan [1 ]
Wu, Yanfei [1 ]
Zheng, Xinqi [1 ]
Shen, Jianxin [1 ]
Wang, Guyue [1 ]
Wang, Shouguo [1 ]
Shen, Baogen [1 ,3 ,4 ]
机构
[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[2] Jiangxi Normal Univ, Sch Phys Commun & Elect, Jiangxi Key Lab Nanomat & Sensors, Nanchang 330022, Jiangxi, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[4] Univ Chinese Acad Sci, Beijing 100190, Peoples R China
基金
北京市自然科学基金;
关键词
2D magnetic materials; in situ nitrogen doping; antiferromagnetism; CRYSTAL;
D O I
10.3390/ma15051716
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Exploration for the new members of air-stable 2D antiferromagnetic magnets to widen the magnetic families has drawn great attention due to its potential applications in spintronic devices. In addition to seeking the intrinsic antiferromagnets, externally introducing antiferromagnetic ordering in existing 2D materials, such as structural regulation and phase engineering, may be a promising way to modulate antiferromagnetism in the 2D limit. In this work, the in situ nitrogen doping growth of ultrathin 2D Cr2S3 nanoflakes has been achieved. Antiferromagnetic ordering in 2D Cr2S3 nanoflakes can be triggered by nitrogen doping induced new phase (space group P3 over bar 1c). This work provides a new route to realize antiferromagnetism in atomically thin 2D magnets and greatly extend applications of 2D magnets in valleytronics and spintronics.
引用
收藏
页数:8
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