Nonlinear photoconductivity characteristics of antenna activated by 80-picosecond optical pulses

被引：3

作者：

Liu, DW

Carr, PH

Thaxter, JB

机构：

[1] Rome Laboratory, Hanscom AFB

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 06期

关键词：

D O I：

10.1109/68.502104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report nonlinear characteristics of the radiated field, generated by a gigahertz photoconducting antenna, versus the bias field. For semi-insulating GaAs a saturation phenomenon was observed when the photocarrier population was below 3 x 10(16)/cm(3). A set of characteristic curves was obtained as a function of bias field (< 12 KV/cm) and optical fluence (< 30 mu J/cm(2)). Fe-doped InP and LTG-GaAs were also investigated for comparisons, The experimental data obtained can be qualitatively analyzed by the bias field depletion effect and electron intersub-band scattering mechanism, This technique can also be utilized as a convenient tool to study the transient electronic: behavior of the photocarriers in the picosecond regime.

引用

页码：815 / 817

页数：3

共 48 条

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