Electronic band structure of II-VI quaternary alloys in a tight-binding approach

被引:0
|
作者
García, AE
Camacho, A
Navarro, H
Olguín, D
Baquero, R
机构
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07300, DF, Mexico
[2] Univ Los Andes, Dept Fis, Santa Fe Bogota, Colombia
[3] Univ Autonoma San Luis Potosi, Inst INvest Communicac Opt, San Luis Potosi 78280, Mexico
关键词
II-VI quaternary alloys; electronic band structure; tight-binding method;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on a successful description of the band gap change with composition for the II-VI ternary alloys, we describe a method to set up tight-binding Hamiltonians for quaternary alloys. We use a formula that can be thought as a straightforward generalization of the virtual crystal approximation for this case. In this work we consider Zn1-yCdySe1-xTex and study the change of the band gap with composition obtained by direct diagonalization of the corresponding Hamiltonians. We next consider the technological interesting compound Zn1-yCdyS1-xSex. The agreement with the experimental data is remarkable.
引用
收藏
页码:249 / 252
页数:4
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