Spectroscopic ellipsometry study of organic light emitting diode based on phosphorescent PtOEP

被引:0
|
作者
Tsuboi, T [1 ]
Wasai, Y
Nabatova-Gabain, N
机构
[1] Kyoto Sangyo Univ, Kyoto 6038555, Japan
[2] Horiba Ltd, Tokyo 1010031, Japan
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2004年 / E87C卷 / 12期
关键词
organic light emitting diodes; spectroscopic ellipsometry; optical constants; layer thickness; PtOEP;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have determined the thickness and optical constants (refractive index and extinction coefficient) of each layer in the multilayer organic light emitting diode (OLED) devices based on phosphorescent platinum octaethyl porphine (PtOEP) using a phase modulated spectroscopic ellipsometer. The thickness of each layer estimated from the ellipsometric measurement is different from the thickness measured with quartz oscillator during the evaporation of organic materials. The deviation of total multi-layer thickness is about 5%, while the deviation in each of N, N'-bis(1-naphtyl)-N, N'-diphenyl-1,1'-biphenyl-4,4'-diamine (alpha-NPD) and aluminum tris 8-hydroxyquinoline (Alq(3)) layers is about 20-25%. Additionally the spectra of refractive index and extinction coefficient of Alq3 and a-NPD layers are different from those that are measured using the single layer films. These results are understood by penetration of organic material from the neighboring layers in the multi-layer structure devices.
引用
收藏
页码:2039 / 2044
页数:6
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