CMOS Low Noise Amplifier Design for Microwave and mmWave Applications

被引：8

作者：

Li, Xue Jun ^{[1
]}

Zhang, Yue Ping ^{[2
]}

机构：

[1] Auckland Univ Technol, Dept Elect & Elect Engn, Auckland 1010, New Zealand

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore

来源：

PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER | 2018年 / 161卷

关键词：

RECEIVER FRONT-END; GAIN LNA; NM CMOS; FEEDBACK; NF; OPTIMIZATION; ENHANCEMENT; TRANSCEIVER; LINEARITY; TECHNOLOGY;

D O I：

10.2528/PIER18012410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS) technology for radio transceivers at microwave and millimeter wave (mmWave) frequencies. First, the evolution of wireless communication systems and CMOS technology are briefly revisited to highlight the requirements of an LNA design. Then, key performance parameters and device circuit models are described. Next, we discuss typical LNA topologies, followed by those important design techniques, algorithms and concepts developed specifically for CMOS LNAs. Moreover, reported CMOS LNA designs are summarized, and future design issues are identified. Finally, we conclude the paper and briefly outline our future work on CMOS LNA designs.

引用

页码：57 / 85

页数：29

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