Characteristics of organic field effect transistors using simple fabricated nano-gap electrode

In order to fabricate nano-gap electrodes for organic field effect transistors (OFETs), we proposed a simple technique to fabricate the nano-gap electrodes using over etching method. The gap was controlled about 250 nm on Si substrate. We have succeeded making nano-gap electrodes whose resistance was 7.5 TOmega. Then, the nano-gap electrodes as source-drain electrodes were applied to OFETs and characteristics were measured. The I-d-V-d characteristics of the similar value as OFETs with micron channel were observed.