Simultaneous effects of electric and magnetic fields in a GaAs/AlAs spherical quantum dot with a hydrogenic impurity

被引：19

作者：

Dane, C. ^{[2
,3
]}

Akbas, H. ^{[1
,3
]}

Minez, S. ^{[1
]}

Guleroglu, A. ^{[2
]}

机构：

[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey

[2] Trakya Univ, Dept Math, TR-22030 Edirne, Turkey

[3] Trakya Univ, Int Ctr Phys & Appl Math, TR-22030 Edirne, Turkey

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 07期

关键词：

Turning point; Spherical dot; Normalized binding energy; BINDING-ENERGY; DONOR STATES;

D O I：

10.1016/j.physe.2010.02.007

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, the effects of electric and magnetic fields on the ground state of a hydrogenic on-centre donor in a GaAs/AlAs spherical quantum dot have been studied. A variational approach within the framework of effective mass approximation is used in the calculations. Overall, the analysis shows that a proper choice of the dot radius and the electric and magnetic fields can largely change the normalized binding energy, which in turn may be used to feel the small change in dot radius and thus detect different magnetic field strengths. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1901 / 1904

页数：4

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