Healing of reduced graphene oxide with methane plus hydrogen plasma

被引：46
|
作者：
Zhu, Detao [1 ,2 ]
Pu, Haihui [3 ]
Lv, Peng [1 ,2 ]
Zhu, Zhijia [1 ,2 ]
Yang, Conghao [1 ,2 ]
Zheng, Ruilin [1 ,2 ]
Wang, Zhongyue [1 ,2 ]
Liu, Chunxiao [1 ,2 ]
Hu, Ertao [1 ,2 ]
Zheng, Jiajin [1 ,2 ]
Yu, Kehan [1 ,2 ]
Wei, Wei [1 ,2 ]
Chen, Liangyao [1 ,2 ,4 ]
Chen, Junhong [3 ]
机构：
[1] Nanjing Univ Posts & Telecommun, Sch Optoelect Engn, Nanjing 210023, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Inst Adv Mat, Nanjing 210023, Jiangsu, Peoples R China
[3] Univ Wisconsin, Dept Mech Engn, Milwaukee, WI 53211 USA
[4] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
来源：
CARBON | 2017年 / 120卷
关键词：
CHEMICAL-VAPOR-DEPOSITION; RAMAN-SPECTROSCOPY; REDUCTION; GROWTH; RESTORATION; GRAPHITE; SHEETS; REPAIR; FILMS;
D O I：
10.1016/j.carbon.2017.05.032
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A method to heal defects in reduced graphene oxide (RGO) is reported, accomplished by using methane + hydrogen plasma. The addition of hydrogen notably shifts the equilibrium between etching and growth of graphene, and suppresses the nucleation of carbon nanoparticles. The best recovery of RGO is observed at 800 degrees C, resulting in largest integrated Raman 2D/G peak area ratio (0.56) and highest Hall mobility (52 cm(2) V-1 s(-1)). A density functional theory calculation reveals that the repair process is dominated by reaction between the dangling bonds and CH2 and CH radicals. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：274 / 280
页数：7
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