Properties of Bi2Te3 single crystals doped with Sn

被引：9
|
作者：
Svechnikova, TE [1 ]
Nikhezina, IY [1 ]
Polikarpova, NV [1 ]
机构：
[1] Russian Acad Sci, Baikov Inst Met & Mat Res, Moscow 117334, Russia
来源：
INORGANIC MATERIALS | 2000年 / 36卷 / 08期
关键词：
Thermoelectric Power; Hall Coefficient; Bismuth Telluride; Dope Crystal; Thermoelectric Figure;
D O I：
10.1007/BF02758594
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of doping with Sn on the properties of Czochrakki-grown Bi2Te3 crystals was studied. The effective segregation coefficient for Sn was determined to be 0.6. The thermoelectric power, electrical conductivity, and Hall coefficient of the doped crystals were measured at room temperature. Doping with low Sn concentrations (0.2-0.5 at. %) was found to have only a weak effect on the electrical properties of p-type Bi2Te3. Doping with 0.7-1 at. % Sn reduces the thermoelectric power and increases the electrical conductivity and hole concentration. Lattice thermal conductivity is a nonmonotonic function of Sn concentration. The thermoelectric figure of merit of Bi2Te3 doped with less than 0.6 at. % Sn exceeds that of undoped Bi2Te3.
引用
收藏
页码：765 / 767
页数：3
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