Newly developed mask inspection system with DUV laser illumination

被引：9
|
作者：
Oohashi, K [1 ]
Inoue, H [1 ]
Nomura, T [1 ]
Ono, A [1 ]
Tabata, M [1 ]
Suzuki, H [1 ]
机构：
[1] Toshiba Corp, Corp Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2350017, Japan
来源：
PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VII | 2000年 / 4066卷
关键词：
DUV laser; laser illumination; speckle noise; phase plate;
D O I：
10.1117/12.392086
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new mask inspection system for 150nm and 130nm semiconductor devices which utilizes a DUV laser of 257nm wavelength for an inspection illumination has been developed. A newly developed optical phase shift disk cancels the speckle noise caused by the high coherency of a laser. The phase shift disk has micro pits with different depths disposed randomly over the entire plate surface. The speckle pattern changes randomly by rotating the plate, and averaging pattern image by Time Delay Integration (TDI) sensor cancels the speckle noise of the laser illumination. Using this method, inspection of masks was realized at DUV wavelength.
引用
收藏
页码：452 / 461
页数：10
相关论文
共 50 条
  • [31] OPTIMIZATION OF ILLUMINATION SYSTEM FOR LC PROJECTOR USING NEWLY DEVELOPED REVERSE RAY-TRACING METHOD
    SHIBATANI, T
    NAKANISHI, H
    HAMADA, H
    SHARP TECHNICAL JOURNAL, 1993, (57): : 52 - 56
  • [32] Improvement of a DUV mask inspection tool to hand over the baton for next-generation tool smoothly
    Hashimoto, Hideaki
    Kikuiri, Nobutaka
    Matsumoto, Eiji
    Tsuchiya, Hideo
    Ogawa, Riki
    Isomura, Ikunao
    Isobe, Manabu
    Takahara, Kenichi
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XX, 2013, 8701
  • [33] Capability of DUV inspection for the LWR improved EUV mask of sub-15 nm hp on wafer
    Naka, Masato
    Chiba, Keisuke
    Kumada, Ai
    Morishita, Keiko
    Takai, Kosuke
    Yoshikawa, Ryoji
    Arisawa, Yukiyasu
    Kamo, Takashi
    Shiobara, Eishi
    Kanamitsu, Shingo
    PHOTOMASK TECHNOLOGY 2019, 2019, 11148
  • [34] DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm
    Naka, Masato
    Ando, Akihiko
    Morishita, Keiko
    Yoshikawa, Ryoji
    Kamo, Takashi
    Hirano, Takashi
    Itoh, Masamitsu
    PHOTOMASK TECHNOLOGY 2017, 2017, 10451
  • [35] System for illumination of an EUV-nanolithograph mask
    S. Yu. Zuev
    A. E. Pestov
    V. N. Polkovnikov
    N. N. Salashchenko
    A. S. Skryl’
    I. L. Strulya
    M. N. Toropov
    N. I. Chkhalo
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2011, 5 : 517 - 519
  • [36] System for illumination of an EUV-nanolithograph mask
    Zuev, S. Yu.
    Pestov, A. E.
    Polkovnikov, V. N.
    Salashchenko, N. N.
    Skryl', A. S.
    Strulya, I. L.
    Toropov, M. N.
    Chkhalo, N. I.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2011, 5 (03) : 517 - 519
  • [37] Alternating phase shift mask inspection using multiple simultaneous illumination techniques
    Zurbrick, L
    Heumann, J
    Rudzinski, M
    Stokowski, S
    Urbach, JP
    Wang, LT
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY IX, 2002, 4754 : 511 - 516
  • [38] Formation and detection of sub-pellicle defects by exposure to DUV system illumination
    Grenon, BJ
    Peters, CR
    Bhattacharyya, K
    Volk, W
    16TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS, 2000, 3996 : 47 - 61
  • [39] Laser induced damage studies in newly developed laser glasses
    Garg, A
    Tripathi, KN
    Kapoor, A
    Bansal, SK
    HIGH-POWER LASERS AND APPLICATIONS III, 2004, 5627 : 433 - 441
  • [40] Formation and detection of sub-pellicle defects by exposure to DUV system illumination
    Grenon, BJ
    Peters, CR
    Bhattacharyya, K
    Volk, W
    19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 1999, 3873 : 162 - 176
12345