共 50 条
- [43] Polarization selective dual frequency metasurface-based resonant thermal terahertz emitters on n-GaAs/GaAs 2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ, 2023,
- [45] Effect of lattice defects on LO phonon-plasmon coupled modes in n-GaAs ULTRAFAST PHENOMENA XII, 2001, 66 : 387 - 389
- [46] Optical characteristics of 1.18-eV luminescence band complexes in n-GaAs:Sn(Si): Results of a photoluminescence study with polarized resonant excitation Semiconductors, 1998, 32 : 33 - 39
- [47] NONPARABOLICITY OF THE CONDUCTION-BAND AND THE COUPLED PLASMON-PHONON MODES IN N-GAAS PHYSICAL REVIEW B, 1980, 21 (04): : 1511 - 1515
- [50] Improvement in electrical properties at an n-GaAs/n-GaAs regrown interface using ammonium sulfide treatment JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01): : 10 - 14