A CMOS Outphasing Power Amplifier With Integrated Single-Ended Chireix Combiner

被引:23
|
作者
Lee, Sungho [1 ,2 ]
Nam, Sangwook [1 ]
机构
[1] Seoul Natl Univ, Appl Electromagnet Lab, Sch Elect Engn & Comp Sci, Inst New Media & Commun, Seoul 151742, South Korea
[2] Korea Elect Technol Inst, Songnam 463816, South Korea
关键词
Complementary metal-oxide-semiconductor (CMOS) power amplifier (PA); outphasing PA; single-ended Chireix combiner;
D O I
10.1109/TCSII.2010.2048353
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief proposes an on-chip outphasing power amplifier that uses a single-ended Chireix combiner for a linear amplification with a nonlinear component amplifier. The proposed combiner structure consists of a lumped inductor and a lumped capacitor that can achieve the simple single-ended configuration of a Chireix combiner. It is also suitable for on-chip implementation with minimum efficiency deterioration. An inductance-capacitance balun using the lumped model lambda/4 and 3 lambda/4 transmission lines was effectively merged into a simple Chireix combiner for two outphased input signals. The relation between the output resistance and the outphasing angle of the input signals was derived to determine the maximum efficiency. A voltage-mode class-D power amplifier was used with the combiner to illustrate the combiner's effectiveness. The prototype fabricated in a 0.13-mu m complementary metal-oxide-semiconductor process shows a maximum 52% power-added efficiency (continuous wave) and a -47-dBc adjacent channel power ratio performance at a 10-MHz offset with a 1.92-GHz wideband code-division multiple-access signal.
引用
收藏
页码:411 / 415
页数:5
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