Direct observation of optically injected spin-polarized currents in semiconductors -: art. no. 216601

被引：215

作者：

Hübner, J

Rühle, WW

Klude, M

Hommel, D

Bhat, RDR

Sipe, JE

van Driel, HM

机构：

[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

[4] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.90.216601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Quantum interference of one- and two-photon excitation of unbiased semiconductors yields ballistic currents of carriers. The magnitudes and directions of the currents and the spin orientations of the carriers are controlled by the polarization and relative phase of the exciting femtosecond laser fields. We provide direct experimental evidence for the spin polarization of the optically injected spin currents by detecting a phase-dependent spatial shift of the circularly polarized photoluminescence in cubic ZnSe.

引用

页数：4

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