Gate driver supply of power switches without galvanic insulation

被引：0

作者：

Mitova, R ^{[1
]}

Crébier, JC ^{[1
]}

Aubard, L ^{[1
]}

Scheaffer, C ^{[1
]}

机构：

[1] ENSIEG, CNRS, INPG, LEB, F-38402 St Martin Dheres, France

来源：

CONFERENCE RECORD OF THE 2004 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-4: COVERING THEORY TO PRACTICE | 2004年

关键词：

component; Gate driver; Power supply; monolithic integration; MOSFET devices;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a topology for MOSFET or IGBT gate driver supply eliminating the galvanic insulation. This is a parallel circuit around the main switch. The structure contains two MOSFET components. This topology can be entirely integrated throughout a classical double diffused MOSFET technological process. The topology is implemented in a buck converter and simulated with Pspice in order to validate the operating principle. It is demonstrated that thanks to parasitics, a pulse linear regulation procedure is operating. The integrated gate driver supply takes advantage of switching events to save and store commutation energy. More the topology operates as a snubber. Results of experimental set are also provided. Integration procedure is discussed.

引用

页码：1917 / 1923

页数：7

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