Gate driver supply of power switches without galvanic insulation

In this paper we present a topology for MOSFET or IGBT gate driver supply eliminating the galvanic insulation. This is a parallel circuit around the main switch. The structure contains two MOSFET components. This topology can be entirely integrated throughout a classical double diffused MOSFET technological process. The topology is implemented in a buck converter and simulated with Pspice in order to validate the operating principle. It is demonstrated that thanks to parasitics, a pulse linear regulation procedure is operating. The integrated gate driver supply takes advantage of switching events to save and store commutation energy. More the topology operates as a snubber. Results of experimental set are also provided. Integration procedure is discussed.