Study on phase diagram of Bi2O3-SiO2 system for Bridgman growth of Bi4Si3O12 single crystal

被引:0
|
作者
Fei, YT [1 ]
Fan, SJ
Sun, RY
Ishii, M
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
[2] Shonan Inst Technol, Fujisawa, Kanagawa 251, Japan
关键词
Bi2O3-SiO2; system; phase diagram; Bridgman growth; scintillation properties;
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Phase relation of Bi2O3-SiO2 system was evaluated experimentally from DTA and XRD measurements and its stable and metastable phase diagrams were proposed. Although BSO melts near-congruently at 1025 degrees C in the stable phase equilibrium its melt crystallizes to form metastable phase Bi2SiO5 in accordance with the metastable phase diagram while cooling Therefore, BSO couldn't nucleate and crystallize spontaneously without crystal seed and only Bi2SiO5 crystallized at about 850 degrees C with significant supercooling during Bridgman growth. BSO single crystal with 20x20x100mm(3) was grown in a vertical Bridgman furnace with a BSO seed according to its phase diagram The measuring results of scintillation properties of BSO specimen show that its decay constant is 91 ns (about 1/3 of EGO) and light output is 23% of EGO.
引用
收藏
页码:183 / 188
页数:6
相关论文
共 50 条
  • [21] Fabrication and characterization of crystalline Bi2TeO5 - Bi4Si3O12 - SiO2 nanocomposite
    Derhachov, Mykhailo
    Moiseienko, Vasyl
    Kutseva, Natalia
    Abu Sal, Bilal
    Holze, Rudolf
    EUROPEAN PHYSICAL JOURNAL PLUS, 2019, 134 (07):
  • [22] Development of BSO (Bi4Si3O12) crystal for radiation detector
    Ishii, M
    Harada, K
    Hirose, Y
    Senguttuvan, N
    Kobayashi, M
    Yamaga, I
    Ueno, H
    Miwa, K
    Shiji, F
    Yiting, F
    Nikl, M
    Feng, XQ
    OPTICAL MATERIALS, 2002, 19 (01) : 201 - 212
  • [23] NEUTRON-DIFFRACTION STUDY OF BI4SI3O12
    SEGAL, DJ
    SANTORO, RP
    NEWNHAM, RE
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE KRISTALLGEOMETRIE KRISTALLPHYSIK KRISTALLCHEMIE, 1966, 123 (01): : 73 - &
  • [24] THERMOLUMINESCENCE SPECTRA OF EULYTINE BI4SI3O12 AND BI4GE3O12 SINGLE-CRYSTALS
    KOVACS, L
    RAYMOND, SG
    LUFF, BJ
    PETER, A
    TOWNSEND, PD
    JOURNAL OF LUMINESCENCE, 1994, 60-1 : 574 - 577
  • [25] GROWTH OF EULYTINE BI4SI3O12 AND SUBSTITUTED COMPOUNDS BI4GE3O12 BY CZOCHRALSKI METHOD
    VONPHILIPSBORN, H
    JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 348 - +
  • [26] OH- absorption in Bi4Si3O12 single crystals
    Kovacs, L
    Beneventi, P
    Capelletti, R
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1995, 134 (1-4): : 287 - 291
  • [27] Preparation and characterization of Bi4Si3O12 nanoparticles
    Chemistry and Chemical Engineering Institute, Qiqihar University, Qiqihar 161006, China
    不详
    Kuei Suan Jen Hsueh Pao, 2006, 9 (1075-1077+1083):
  • [28] The elastic anisotropy, electronic and optical properties of Bi4Si3O12, Bi2SiO5, Bi12SiO20 and Bi2Si3O9 crystals from first-principles calculations
    Yang, Wanqi
    Zhang, Xudong
    Wang, Feng
    CHEMICAL PHYSICS LETTERS, 2023, 814
  • [29] Synthesis and characterization of Bi4Si3O12, Bi2SiO5, and Bi12SiO20 by controlled hydrothermal method and their photocatalytic activity
    Chen, Chiing-Chang
    Yang, Chin-Tsung
    Chung, Wen-Hsin
    Chang, Jia-Lin
    Lin, Wan-Yu
    JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 2017, 78 : 157 - 167
  • [30] Growth and scintillation properties of Tm3+ doped Bi4Si3O12 single crystals
    Xiao, Xuefeng
    Zhang, Huan
    Wei, Haicheng
    Xu, Jiayuei
    Chu, Yaoqing
    Yang, Bobo
    Zhang, Xuefeng
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2020, 14 (7-8): : 367 - 371