A high density 1T/2C cell with Vcc/2 reference level for high stable FeRAMs

被引：3
|
作者：
Tanabe, N [1 ]
Kobayashi, S [1 ]
Hada, H [1 ]
Kunio, T [1 ]
机构：
[1] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 22911, Japan
来源：
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年
关键词：
D O I：
10.1109/IEDM.1997.650517
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A one transistor and two ferroelectric-capacitors (1T/2C) cell with Vcc/2 reference voltage level has been developed for high stable operation of ferroelectric nonvolatile memories (FeRAMs). The fixed reference voltage scheme creates a large sensing margin between the reference voltage and signal voltage, resulting into stable operation. 8F(2) (F : feature size) cell area for the 1T/2C cell is as small as a 1T/1C cell because smaller capacitance value of 1T/2C cell than that of 1T/1C is acceptable for a stable operation. The structure is promising for high density FeRAMs.
引用
收藏
页码：863 / 866
页数：4
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