Power level-dependent dual-operating mode LDMOS power amplifier for CDMA wireless base-station applications

被引:14
|
作者
Chung, Y [1 ]
Jeong, J
Wang, Y
Ahn, D
Itoh, T
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Soonchunhyang Univ, Div Informat Technol Engn, Choongnam 336745, South Korea
关键词
adjacent channel leakage power ratio (ACLR); characteristic impedance; code division multiple access (CDMA); coupled-line coupler; laterally diffused metal-oxide semiconductor; (LDMOS); power-added efficiency (PAE); power amplifier;
D O I
10.1109/TMTT.2004.841220
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design and analysis of a dual-operating mode laterally diffused metal-oxide semiconductor (LDMOS) power amplifier for code-division multiple-access wireless communication base-station applications is presented in this paper. The amplifier structure consists of four parallelly located single-stage LDMOS amplifier array, the dual-mode input power divider, and output power combiner. In this dual-mode operation, the number of operating power amplifier (either one or four amplifiers) is controlled depending on the required power level. This results in significant improvement in efficiency performance of the amplifier by minimizing unnecessary dc power consumption. In addition to the enhancement of efficiency, the amplifier design approach also provides better overall linearity performance. The proposed dual-operating mode design technique was successfully demonstrated by designing, implementing, and testing an LDMOS power amplifier with Motorola MRF 21030 in this study.
引用
收藏
页码:739 / 746
页数:8
相关论文
共 50 条
  • [21] DRAIN EFFICIENCY AMPLIFIER OF 50% WITH OPTIMIZED POWER RANGE FOR CDMA BASE STATION
    Zheng, Guangming
    Lin, Weigan
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2010, 52 (06) : 1244 - 1246
  • [22] 28V planar GaAs MESFETs for wireless base-station power amplifiers
    Yang, B
    Halder, S
    Ye, PD
    Daum, G
    Dai, W
    Frei, M
    Ng, K
    Bude, J
    Hwang, JCM
    Wilk, G
    2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 244 - 247
  • [23] A suboptimum base-station assignment for CDMA cellular networks with closed-loop power control
    Mendo, L
    2004 IEEE 15TH INTERNATIONAL SYMPOSIUM ON PERSONAL, INDOOR AND MOBILE RADIO COMMUNICATIONS, VOLS 1-4, PROCEEDINGS, 2004, : 2850 - 2855
  • [24] Dual-channel trench LDMOS on SOI for RF power amplifier applications
    Punetha, Mayank
    Singh, Yashvir
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (02) : 639 - 645
  • [25] Dual-channel trench LDMOS on SOI for RF power amplifier applications
    Mayank Punetha
    Yashvir Singh
    Journal of Computational Electronics, 2016, 15 : 639 - 645
  • [26] High frequency power LDMOS technologies for base station applications status, potential, and Benchmarking
    Ma, G
    Chen, Q
    Tornblad, O
    Wei, T
    Ahrens, C
    Gerlach, R
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 373 - 376
  • [27] Multifunctional Radio Frequency Device With Integrated Dual-Polarized Antenna, Filters, and Power Combiners for Base-Station Applications
    Xu, Jiageng
    Mao, Chunxu
    Zhang, Xiu Yin
    IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, 2025, 24 (03): : 681 - 685
  • [28] Doherty Power Amplifier Design employing Direct Input Power Dividing for Base Station Applications
    Kim, Jungjoon
    Moon, Junghwan
    Kang, Daehyun
    Jee, Seunghoon
    Woo, Young Yun
    Kim, Bumman
    40TH EUROPEAN MICROWAVE CONFERENCE, 2010, : 866 - 869
  • [29] A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications
    Joshin, K
    Kikkawa, T
    Hayashi, H
    Maniwa, T
    Yokokawa, S
    Yokoyama, M
    Adachi, N
    Takikawa, M
    2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 983 - 985
  • [30] Digitally Assisted Dual-Switch High-Efficiency Envelope Amplifier for Envelope-Tracking Base-Station Power Amplifiers
    Hsia, Chin
    Zhu, Anding
    Yan, Jonmei J.
    Draxler, Paul
    Kimball, Donald F.
    Lanfranco, Sandro
    Asbeck, Peter M.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (11) : 2943 - 2952